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IRF9130
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
P-CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
1
11.18 (0.440) 10.67 (0.420)
26.67 (1.050) max.
4.09 (0.161) 3.84 (0.151) dia. 2 plcs.
2
-100V -11A W 0.2W
20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060)
* HERMETICALLY SEALED TO-3 METAL PACKAGE * SIMPLE DRIVE REQUIREMENTS * SCREENING OPTIONS AVAILABLE
1.09 (0.043) 0.97 (0.038) dia. 2 plcs.
TO-3 Metal Package
Pin 1 - Gate Pin 2 - Source Case - Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
12.07 (0.475) 11.30 (0.445)
20V (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) -11A -7.0A -50A 75W 0.6W/C
2
Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current
1
81mJ -11A 7.5mJ -5.5V/ns -55 to +150C 300C
Repetitive Avalanche Energy 1 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature 1.6mm (0.63") from case for 10 sec.
Notes 1) Repetitive Rating - Pulse width limited by maximum junction temperature. 2) @ VDD = -25V , L 1.0mH , RG = 25W , Peak IL = -11A , Starting TJ = 25C 3) @ ISD -11A , di/dt -140A/ms , VDD BVDSS , TJ 150C , Suggested RG = 7.5W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
Prelim. 10/99
IRF9130
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
Parameter
STATIC ELECTRICAL RATINGS BVDSS Drain - Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage Static Drain - Source On-State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS IGSS IGSS CDC Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage
Test Conditions
VGS = 0 ID = -1mA Reference to 25C ID = -1mA VGS = -10V ID = -7.0A VGS = -10V ID = -11A VDS = VGS ID = -250mA VDS -15V IDS = -7.0A VGS = 0 VDS = 0.8 x Max TJ = 125C VGS = -20V VGS = 20V
Min.
-100
Typ.
Max.
Unit
V
-0.087 0.3 0.35 -4 -25 -250 -100 100 12 860 350 125 15 1.0 2.0 29 7.1 21 60 140 140 140 -11 -50
V / C
W
V S (E)
-2 3
mA
nA
DYNAMIC CHARACTERISTICS Drain to Case Capacitance VGS = 0 Input Capacitance VDS = - 25V Output Capacitance f = 1MHz Reverse Transfer Capacitance Total Gate Charge VGS = -10V Gate - Source Charge ID = -11A Gate - Drain ("Miller") Charge VDS = 0.5 x max Turn-On Delay Time VDD = -50V Rise Time ID = -11A Turn-Off Delay Time RG = 7.5W Fall Time SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time IS = -11A TJ = 25C VGS = 0 IF = -11A VDD -50V di / dt -100A/ms TJ = 25C
pF
nC
ns
A V ns
-4.7 250 3.0 Negligible 5.0 13 1.67 0.12 30
mC
PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) THERMAL CHARACTERISTICS Thermal Resistance Junction - Case Thermal Resistance Case - Sink Thermal Resistance Junction - Ambient 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
nH
RqJC RqCS RqJA
Notes
C/W
Semelab plc.
Prelim. 10/99

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